NTE2324 데이터 시트보기 (PDF) - NTE Electronics

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NTE2324

Silicon NPN Transistor Color TV Horizontal Deflection Output

NTE Electronics 

NTE2324

Silicon NPN Transistor

Color TV Horizontal Deflection Output

Applications:

D Color TV Horizontal Deflection Output

Features:

D High Speed (tf = 100nsec)

D High Breakdown Voltage (VCBO = 1500V)

D High Reliability (adoption of HVP process)

Absolute Maximum Ratings:

Collector to Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V

Collector to Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V

Emitter to Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V

Collector Current, IC

Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A

Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A

Collector Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70W

Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C

Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Collector Cutoff Current

ICES VCE = 1500V

– – 1.0 mA

ICBO VCB = 800V

– – 10 µA

Collector Sustain Voltage

VCEO(sus) IC = 100mA, IB = 0

800 – – V

Emitter Cutoff Current

IEBO VEB = 4V

– – 1.0 mA

Collector–Emitter Saturation Voltage VCE(sat) IC = 6A, IB = 1.2A

– – 5.0 V

Base–Emitter Saturation Voltage

VBE(sat) IC = 6A, IB = 1.2A

– – 1.5 V

DC Current Gain

hFE VCE = 5V, IC = 1A

8––

VCE = 5V, IC = 6A

5 – 10

Fall Time

tf

IC = 6A, IB1 = 1.2A, IB2 = 2.4A – 0.1 0.3 µs

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