NTE2581 데이터 시트보기 (PDF) - NTE Electronics

부품명

상세내역

제조사

NTE2581

Silicon NPN Transistor High Speed Switching Regulator

NTE Electronics 

NTE2581

Silicon NPN Transistor

High Speed Switching Regulator

Features:

D High Breakdown Voltage and High Reliability

D Fast Switching Speed

D Wide ASO

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)

Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V

Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V

Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V

Collector Current, IC

Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A

Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A

Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A

Collector Dissipation, PC

TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.75W

TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70W

Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C

Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C

Note 1. Pulse Width ≤ 300µs, Duty Cycle ≤ 10%.

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Collector Cutoff Current

ICBO VCB = 400V, IE = 0

Emitter Cutoff Current

DC Current Gain

IEBO

hFE

VEB = 5V, IC = 0

VCE = 5V, IC = 1.6A

VCE = 5V, IC = 8A

VCE = 5V, IC = 10mA

Current Gain–Bandwidth Product

fT

VCE = 10V, IC = 1.6A

Output Capacitance

Collector–Emitter Saturation Voltage

Base–Emitter Saturation Voltage

Cob

VCE(sat)

VBE(sat)

VCB = 10V, f = 1MHz

IC = 8A, IB = 1.6A

IC = 8A, IB = 1.6A

Min Typ Max Unit

–

– 10 µA

–

– 10 µA

20 – 40

10 –

–

10 –

–

– 20 – MHz

– 160 – pF

–

– 0.8 V

–

– 1.5 V

Share Link: