SPP02N60S5(2007) 데이터 시트보기 (PDF) - Infineon Technologies
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SPP02N60S5 Datasheet PDF : 10 Pages
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Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
SPP02N60S5
VDS
RDS(on)
ID
600 V
3
Ω
1.8 A
PG-TO220
2
P-TO220-3-1
23
1
Type
SPP02N60S5
Package
PG-TO220
Ordering Code
Q67040-S4181
Marking
02N60S5
Maximum Ratings
Parameter
Symbol
Continuous drain current
ID
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
ID puls
Avalanche energy, single pulse
EAS
ID = 1.35 A, VDD = 50 V
Avalanche energy, repetitive tAR limited by Tjmax1) EAR
ID = 1.8 A, VDD = 50 V
Avalanche current, repetitive tAR limited by Tjmax
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation, TC = 25°C
Operating and storage temperature
IAR
VGS
VGS
Ptot
Tj , Tstg
Value
Unit
A
1.8
1.1
3.2
50
mJ
0.07
1.8
A
±20
V
±30
25
W
-55... +150
°C
Rev. 2.6
Page 1
2007-08-30
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