1SS355 데이터 시트보기 (PDF) - Diode Semiconductor Korea
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1SS355 Datasheet PDF : 3 Pages
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Diode Semiconductor Korea
Silicon Epitaxial Planar Diode
1SS355
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Forward voltage
Reverse current
Capacitance between
terminals
Reverse Recovery Time
Symbol
VF
IR
CT
Min.
Typ.
Max. Unit
1.2 V
0.1 μA
3
pF
Conditions
IF=100mA
VR=80V
VR=0.5V,f=1MHz
trr
4
ns IF=10mA,VR=6V,RL=100Ω
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
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