IRF720 데이터 시트보기 (PDF) - Intersil
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IRF720 Datasheet PDF : 7 Pages
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IRF720
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
IRF720
400
400
3.3
2.1
13
±20
50
0.4
190
-55 to 150
300
260
UNITS
V
V
A
A
A
V
W
W/oC
mJ
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Drain to Source Breakdown Voltage
BVDSS ID = 250µA, VGS = 0V, (Figure 10)
400
Gate Threshold Voltage
VGS(TH) VDS = VGS, ID = 250µA
2.0
Zero Gate Voltage Drain Current
IDSS VDS = Rated BVDSS, VGS = 0V
-
VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125oC
-
On-State Drain Current (Note 2)
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = 10V (Figure 7)
3.3
IGSS VGS = ±20V
-
rDS(ON) ID = 1.8A, VGS = 10V, (Figures 8, 9)
-
gfs
VDS ≥ 10V, ID = 2.0A, (Figure 12)
1.7
td(ON) VDD = 200V, ID ≈ 3.3A, RGS = 18Ω, VGS = 10V,
-
tr
RL = 59Ω
-
MOSFET Switching Times are Essentially Independent
td(OFF) of Operating Temperature
-
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
tf
-
Qg(TOT) VGS = 10V, ID = 3.3A, VDS = 0.8 x Rated BVDSS
-
IG(REF) = 1.5mA, (Figure 14)
Qgs
Gate Charge is Essentially Independent of Operating
Temperature
-
Qgd
-
CISS VDS = 25V, VGS = 0V, f = 1MHz, (Figure 10)
-
Output Capacitance
COSS
-
Reverse Transfer Capacitance
CRSS
-
Internal Drain Inductance
LD
Measured From the Contact Modified MOSFET
-
Screw on Tab to Center of Die Symbol Showing the
Measured From the Drain
Internal Device
-
Lead, 6mm (0.25in) From
Inductances
Package to Center of Die
D
Internal Source Inductance
LS
Measured From the Source
Lead, 6mm (0.25in) from
LD
-
Header to Source Bonding
G
Pad
LS
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
RθJC
RθJA
Free Air Operation
S
-
-
TYP
-
-
-
-
-
-
1.5
2.7
10
14
30
13
12
2.0
6.0
360
55
20
3.5
4.5
7.5
-
-
MAX
-
4.0
25
250
-
±100
1.8
-
15
21
45
20
20
UNITS
V
V
µA
µA
A
nA
Ω
S
ns
ns
ns
ns
nC
-
nC
-
nC
-
pF
-
pF
-
pF
-
nH
-
nH
-
nH
2.5 oC/W
80 oC/W
4-2
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