MMBTA55G-AE3-R 데이터 시트보기 (PDF) - Unisonic Technologies
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MMBTA55G-AE3-R Datasheet PDF : 3 Pages
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MMBTA55
Preliminary
AMPLIFIER TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-base voltage
Collector-emitter voltage
VCBO
60
V
VCEO
60
V
Emitter-base voltage
Collector current - Continuous
VEBO
IC
4
V
500
mA
Total device dissipation
TA=25°C
Derate above 25°C
PD
350
mW
2.8
mW/°C
Junction Temperature
Storage Temperature
TJ
125
°C
TSTG
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
Junction to Ambient
θJA
357
Note: RJA is measured with the device soldered into a typical printed circuit board.
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
UNIT
°C/W
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Collector-emitter breakdown voltage (note 1)
Emitter-base breakdown voltage
V(BR)CEO
V(BR)EBO
IC=1.0mA, IB=0
IE=100A, Ic=0
Collector cutoff current
Collector cutoff current
ICES
VCE=60V, IB=0
ICBO
VCB=60V, IE=0
ON CHARACTERISTICS
DC current gain
Collector-emitter saturation voltage
hFE
VCE(SAT)
IC=10mA, VCE=1V
IC=100mA, VCE=1V
IC=100mA, IB=10mA
Base-emitter on voltage
VBE(ON) IC=100mA, VCE=1V
SMALL-SIGNAL CHARACTERISTICS
Current gain bandwidth product (note 2)
fT
IC=100mA, VCE=1V,
f=100MHz
Note 1. Pulse test: PW<=300s, Duty Cycle<=2%
2. fT is defined as the frequency at which IhfeI extrapolates to unity.
MIN
TYP
MAX
UNI
T
60
V
4
V
0.1 μA
0.1 μA
100
100
0.25 V
1.2 V
50
MHz
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R206-104.b
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