MAT14 데이터 시트보기 (PDF) - Analog Devices
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MAT14 Datasheet PDF : 12 Pages
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MAT14
SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
TA = 25°C, unless otherwise specified.
Table 1.
Parameter
DC AND AC CHARACTERISTICS
Current Gain
Current Gain Match
Noise Voltage Density
Symbol
hFE
ΔhFE
eN
Offset Voltage
VOS
Offset Voltage Change vs. VCB Change
ΔVOS/ΔVCB
Offset Voltage Change vs. IC Change
Offset Voltage Drift
ΔVOS/ΔIC
ΔVOS/ΔT
Breakdown Voltage
BVCEO
Gain-Bandwidth Product
fT
Collector Leakage Current
Base
ICBO
Substrate
ICS
Emitter
ICES
Input Current
Bias
IB
Offset
IOS
Offset Drift
ΔIOS/ΔT
Collector Saturation Voltage
Output Capacitance
Bulk Resistance
Input Capacitance
VCE(SAT)
COBO
rBE
CEBO
1 Current gain measured at IC = 10 µA, 100 µA, and 1 mA.
2 Current gain match (ΔhFE) defined as: ΔhFE = (100(ΔIB)(hFE min)/IC).
3 Sample tested.
4 Measured at IC = 10 µA and guaranteed by design over the specified range of IC.
5 See Table 2 for the emitter current rating.
6 Guaranteed by design.
Test Conditions/Comments
10 µA ≤ IC ≤ 1 mA
0 V ≤ VCB ≤ 30 V1
−40°C ≤ TA ≤ +85°C
IC = 100 µA2
0 V ≤ VCB ≤ 30 V
IC = 1 mA, VCB = 03
fO = 10 Hz
fO = 100 Hz
fO = 1 kHz
10 µA ≤ IC ≤ 1 mA4
0 V ≤ VCB ≤ 30 V
−40°C ≤ TA ≤ +85°C
0 V ≤ VCB ≤ 30 V4
10 µA ≤ IC ≤ 1 mA
10 µA ≤ IC ≤ 1 mA4, VCB = 0 V
−40°C ≤ TA ≤ +85°C
IC = 100 µA, VCB = 0 V
IC = 10 µA
−40°C ≤ TA ≤ +85°C
IC = 1 mA, VCE = 10 V
VCB = 40 V
−40°C ≤TA ≤ +85°C
VCS = 40 V
−40°C ≤ TA ≤ +85°C
VCE = 40 V
−40°C ≤ TA ≤ +85°C
IC = 100 µA, 0 V ≤ VCB ≤ 30 V
−40°C ≤ TA ≤ +85°C
IC = 100 µA, VCB = 0 V
−40°C ≤ TA ≤ +85°C
IC = 100 µA
−40°C ≤ TA ≤ +85°C
IC = 1 mA, IB = 100 µA
VCB = 15 V, IE5 = 0, f = 1 MHz
10 µA ≤ IC ≤ 10 mA,VCB = 0 V6
VCB = 15 V, IE = 0, f = 1 MHz
Min Typ Max Unit
300 600
200 500
1
4
%
2
4
1.8 3
1.8 3
nV/√Hz
nV/√Hz
nV/√Hz
100 400 µV
120 520 μV
100 200 µV
10 50 µV
0.4 2
40
40
300
µV/°C
V
V
MHz
5
pA
0.5
nA
0.5
nA
0.7
nA
3
nA
5
nA
165 330 nA
200 500 nA
2
13 nA
8
40 nA
100
pA/°C
0.03 0.06 V
10
pF
0.4 0.6 Ω
40
pF
Rev. A | Page 3 of 12
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