VND5012AK-E 데이터 시트보기 (PDF) - STMicroelectronics

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VND5012AK-E

DOUBLE CHANNEL HIGH SIDE DRIVER WITH ANALOG CURRENT SENSE FOR AUTOMOTIVE APPLICATIONS

STMicroelectronics 

VND5012AK-E

ELECTRICAL CHARACTERISTICS (8V<VCC<36V; -40°C<Tj<150°C, unless otherwise specified)

Table 6. Power Section

Symbol

Parameter

VCC

VUSD

VUSDhyst

Operating supply voltage

Undervoltage shutdown

Undervoltage shut-down

hysteresis

RON

On state resistance

Vclamp Clamp Voltage

IS

Supply current

IL(off) Off state output current

Note: (**) PowerMOS leakage included

Test Conditions

IOUT=5A; Tj=25°C

IOUT=5A; Tj=150°C

IOUT=5A; VCC=5V; Tj=25°C

IS=20 mA

Off State; VCC=13V; Tj=25°C;

VIN=VOUT=VSENSE=VCSD=0V

On State; VCC=13V; VIN=5V; IOUT=0A

VIN=VOUT=0V; VCC=13V; Tj=25°C

VIN=VOUT=0V; VCC=13V; Tj=125°C

Min. Typ. Max. Unit

4.5 13

36

V

3

4.5

V

0.5

V

12

mΩ

24

mΩ

16

mΩ

41 46

52

V

2(**) 5(**) µA

3

6

mA

0

3

µA

0

5

Table 7. Switching (VCC=13V)

Symbol

Parameter

td(on)

Turn-on delay time

td(off)

(dVOUT/dt)on

(dVOUT/dt)off

WON

Turn-off delay time

Turn-on voltage slope

Turn-off voltage slope

Switching energy losses at

turn-on

WOFF

Switching energy losses at

turn-off

Test Conditions

RL=2.6Ω

RL=2.6Ω

RL=2.6Ω

RL=2.6Ω

RL=2.6Ω

RL=2.6Ω

Min.

Typ.

15

40

0.3

0.35

TBD

Max.

Unit

µs

µs

V/µs

V/µs

mJ

TBD

mJ

4/13

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