VND5012AK-E 데이터 시트보기 (PDF) - STMicroelectronics

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VND5012AK-E

DOUBLE CHANNEL HIGH SIDE DRIVER WITH ANALOG CURRENT SENSE FOR AUTOMOTIVE APPLICATIONS

STMicroelectronics 

VND5012AK-E

Figure 7. Application Schematic

+5V

Rprot

CS_DIS

VCC

Dld

µC

Rprot

Rprot

INPUT

CURRENT SENSE

GND

OUTPUT

RSENSE

VGND

RGND

DGND

Note: Channel 2 has the same internal circuit as channel 1.

GND PROTECTION NETWORK AGAINST

REVERSE BATTERY

Solution 1: Resistor in the ground line (RGND only). This

can be used with any type of load.

The following is an indication on how to dimension the

RGND resistor.

1) RGND ≤ 600mV / (IS(on)max).

2) RGND ≥ (−VCC) / (-IGND)

where -IGND is the DC reverse ground pin current and can

be found in the absolute maximum rating section of the

device datasheet.

Power Dissipation in RGND (when VCC<0: during reverse

battery situations) is:

PD= (-VCC)2/RGND

This resistor can be shared amongst several different

HSDs. Please note that the value of this resistor should

be calculated with formula (1) where IS(on)max becomes

the sum of the maximum on-state currents of the different

devices.

Please note that if the microprocessor ground is not

shared by the device ground then the RGND will produce a

shift (IS(on)max * RGND) in the input thresholds and the

status output values. This shift will vary depending on

how many devices are ON in the case of several high side

drivers sharing the same RGND.

If the calculated power dissipation leads to a large

resistor or several devices have to share the same

resistor then ST suggests to utilize Solution 2 (see

below).

Solution 2: A diode (DGND) in the ground line.

A resistor (RGND=1kΩ) should be inserted in parallel to

DGND if the device drives an inductive load.

This small signal diode can be safely shared amongst

several different HSDs. Also in this case, the presence of

the ground network will produce a shift (j600mV) in the

input threshold and in the status output values if the

microprocessor ground is not common to the device

ground. This shift will not vary if more than one HSD

shares the same diode/resistor network.

LOAD DUMP PROTECTION

Dld is necessary (Voltage Transient Suppressor) if the

load dump peak voltage exceeds the VCC max DC rating.

The same applies if the device is subject to transients on

the VCC line that are greater than the ones shown in the

ISO T/R 7637/1 table.

µC I/Os PROTECTION:

If a ground protection network is used and negative

transient are present on the VCC line, the control pins will

be pulled negative. ST suggests to insert a resistor (Rprot)

in line to prevent the µC I/Os pins to latch-up.

The value of these resistors is a compromise between the

leakage current of µC and the current required by the

HSD I/Os (Input levels compatibility) with the latch-up

limit of µC I/Os.

-VCCpeak/Ilatchup ≤ Rprot ≤ (VOHµC-VIH-VGND) / IIHmax

Calculation example:

For VCCpeak= - 100V and Ilatchup ≥ 20mA; VOHµC ≥ 4.5V

5kΩ ≤ Rprot ≤ 65kΩ.

Recommended Rprot value is 10kΩ.

8/13

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