MPSA55RLRA(2007) 데이터 시트보기 (PDF) - ON Semiconductor

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MPSA55RLRA
(Rev.:2007)

Amplifier Transistors

ON Semiconductor 

NPN − MPSA05, MPSA06*; PNP − MPSA55, MPSA56*

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Collector −Emitter Breakdown Voltage (Note 2)

(IC = 1.0 mAdc, IB = 0)

MPSA05, MPSA55

MPSA06, MPSA56

Emitter −Base Breakdown Voltage

(IE = 100 mAdc, IC = 0)

Collector Cutoff Current

(VCE = 60 Vdc, IB = 0)

Collector Cutoff Current

(VCB = 60 Vdc, IE = 0)

(VCB = 80 Vdc, IE = 0)

ON CHARACTERISTICS

MPSA05, MPSA55

MPSA06, MPSA56

DC Current Gain

(IC = 10 mAdc, VCE = 1.0 Vdc)

(IC = 100 mAdc, VCE = 1.0 Vdc)

Collector −Emitter Saturation Voltage

(IC = 100 mAdc, IB = 10 mAdc)

Base−Emitter On Voltage

(IC = 100 mAdc, VCE = 1.0 Vdc)

SMALL−SIGNAL CHARACTERISTICS

Current −Gain − Bandwidth Product (Note 3)

(IC = 10 mA, VCE = 2.0 V, f = 100 MHz)

(IC = 100 mAdc, VCE = 1.0 Vdc, f = 100 MHz)

2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.

3. fT is defined as the frequency at which |hfe| extrapolates to unity.

MPSA05

MPSA06

MPSA55

MPSA56

Symbol

V(BR)CEO

V(BR)EBO

ICES

ICBO

hFE

VCE(sat)

VBE(on)

fT

Min

Max

60

−

80

−

4.0

−

−

0.1

−

0.1

−

0.1

100

−

100

−

−

0.25

−

1.2

100

−

50

−

Unit

Vdc

Vdc

mAdc

mAdc

−

Vdc

Vdc

MHz

5.0 ms

+10 V

0

tr = 3.0 ns

TURN−ON TIME

−1.0 V

VCC

+40 V

100

Vin

RB

5.0 mF

100

RL

OUTPUT

* CS t 6.0 pF

TURN−OFF TIME

+VBB

VCC

+40 V

5.0 ms

tr = 3.0 ns

100

Vin

RB

5.0 mF

100

RL

OUTPUT

* CS t 6.0 pF

*Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities

Figure 1. Switching Time Test Circuits

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