MPSA55RLRA 데이터 시트보기 (PDF) - ON Semiconductor

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MPSA55RLRA

Amplifier Transistors

ON Semiconductor 

MPSA05, MPSA06, MPSA55, MPSA56

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

OFF CHARACTERISTICS

Collector −Emitter Breakdown Voltage (Note 2.)

(IC = 1.0 mAdc, IB = 0)

V(BR)CEO

MPSA05, MPSA55

60

MPSA06, MPSA56

80

Emitter −Base Breakdown Voltage (IE = 100 µAdc, IC = 0)

Collector Cutoff Current (VCE = 60 Vdc, IB = 0)

Collector Cutoff Current

(VCB = 60 Vdc, IE = 0)

(VCB = 80 Vdc, IE = 0)

ON CHARACTERISTICS

V(BR)EBO

4.0

ICES

−

ICBO

MPSA05, MPSA55

−

MPSA06, MPSA56

−

DC Current Gain

(IC = 10 mAdc, VCE = 1.0 Vdc)

(IC = 100 mAdc, VCE = 1.0 Vdc)

Collector −Emitter Saturation Voltage

(IC = 100 mAdc, IB = 10 mAdc)

hFE

100

100

VCE(sat)

−

Base−Emitter On Voltage

(IC = 100 mAdc, VCE = 1.0 Vdc)

SMALL−SIGNAL CHARACTERISTICS

VBE(on)

−

Current −Gain − Bandwidth Product (Note 3.)

(IC = 10 mA, VCE = 2.0 V, f = 100 MHz)

(IC = 100 mAdc, VCE = 1.0 Vdc, f = 100 MHz)

fT

MPSA05

100

MPSA06

MPSA55

50

MPSA56

2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.

3. fT is defined as the frequency at which |hfe| extrapolates to unity.

Max

Unit

Vdc

−

−

−

Vdc

0.1

µAdc

µAdc

0.1

0.1

−

−

−

0.25

Vdc

1.2

Vdc

MHz

−

−

5.0 ms

+10 V

0

tr = 3.0 ns

TURN−ON TIME

−1.0 V

VCC

+40 V

TURN−OFF TIME

+VBB

VCC

+40 V

100

Vin

RB

5.0 mF

100

RL

OUTPUT

* CS t 6.0 pF

5.0 ms

tr = 3.0 ns

100

Vin

RB

5.0 mF

100

RL

OUTPUT

* CS t 6.0 pF

*Total Shunt Capacitance of Test Jig and Connectors

For PNP Test Circuits, Reverse All Voltage Polarities

Figure 1. Switching Time Test Circuits

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