SM3116NSUC-TUG 데이터 시트보기 (PDF) - Unspecified
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SM3116NSUC-TUG Datasheet PDF : 10 Pages
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SM3116NSUC
®
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
VGSS
TJ
TSTG
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
30
±20
V
150
°C
-55 to 150
°C
IS Diode Continuous Forward Current
IDP 300μs Pulse Drain Current Tested
ID a Continuous Drain Current
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
TC=25°C
TC=100°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
Steady State
20
A
140
A
90
60*
A
48
50
W
20
2.5
°C/W
RθJA Thermal Resistance-Junction to Ambient
t ≤ 10s
Steady State
15
°C/W
45
IAS b Avalanche Current, Single pulse (L=0.5mH)
EAS b Avalanche Energy, Single pulse (L=0.5mH)
20
A
100
mJ
Note a：* Current limited by bond wire.
Note b：UIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC).
Electrical Characteristics
(T
A
=
25°C
unless
otherwise
noted)
Symbol
Parameter
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON) c Drain-Source On-state Resistance
Gfs Forward Transconductance
Test Conditions
SM3116NSUC
Unit
Min. Typ. Max.
VGS=0V, IDS=250µA
30
VDS=24V, VGS =0V
-
TJ=85°C
-
VDS=VGS, IDS=250µA
1.5
VGS=±20V, VDS=0V
-
VGS=10V, IDS=40A
-
TJ=125°C -
VGS=4.5V, IDS=20A
-
VDS=5V, IDS=40A
-
-
-
V
-
1
µA
-
30
1.8 2.5 V
- ±100 nA
4.7 5.7
6.9
- mΩ
6
8
95
-
S
Copyright © Sinopower Semiconductor, Inc.
2
Rev. A.1 - September, 2012
www.sinopowersemi.com
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