BUW13F 데이터 시트보기 (PDF) - Philips Electronics
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BUW13F Datasheet PDF : 16 Pages
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Philips Semiconductors
Silicon diffused power transistors
Product specification
BUW13F; BUW13AF
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-h
Rth j-a
thermal resistance from junction to external heatsink note 1
note 2
thermal resistance from junction to ambient
Notes
1. Mounted without heatsink compound and 30 ±5 N force on centre of package.
2. Mounted with heatsink compound and 30 ±5 N force on centre of package.
VALUE
3.4
2.5
35
UNIT
K/W
K/W
K/W
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VCESM
collector-emitter peak voltage
BUW13F
BUW13AF
VCEO
collector-emitter voltage
BUW13F
BUW13AF
ICsat
collector saturation current
BUW13F
BUW13AF
IC
collector current (DC)
ICM
collector current (peak value)
IB
base current (DC)
IBM
base current (peak value)
Ptot
total power dissipation
Tstg
storage temperature
Tj
junction temperature
CONDITIONS
VBE = 0
open base
see Figs 3 and 4
tp < 20 ms; see Fig 4
tp = −20 ms
Th ≤ 25 °C; see Fig.2; note 1
Th ≤ 25 °C; see Fig.2; note 2
Notes
1. Mounted without heatsink compound and 30 ±5 N force on centre of package.
2. Mounted with heatsink compound and 30 ±5 N force on centre of package.
MIN. MAX. UNIT
−
850
V
−
1000 V
−
400
V
−
450
V
−
10
A
−
8
A
−
15
A
−
30
A
−
6
A
−
9
A
−
37
W
−
50
W
−65
+150 °C
−
150
°C
ISOLATION CHARACTERISTICS
SYMBOL
PARAMETER
MAX.
VisolM
Cisol
isolation voltage from all terminals to external heatsink (peak value); note 1 2000
isolation capacitance from collector to external heatsink
21
Note
1. Repetitive peak operation with RH ≤ 65% under clean and dust-free conditions.
UNIT
V
pF
1997 Aug 13
3
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