BUW13F 데이터 시트보기 (PDF) - Philips Electronics
부품명
상세내역
제조사
BUW13F Datasheet PDF : 16 Pages
| |||
Philips Semiconductors
Silicon diffused power transistors
Product specification
BUW13F; BUW13AF
10
handbook, halfpage
VCEsat
(V)
1
MGB871
(1)
(2) (3)
102
handbook, halfpage
hFE
10
MBC098
VCE = 5 V
1V
10−1
10−2
10−1
1
IB (A) 10
(1) IC = 5 A.
(2) IC = 10 A.
(3) IC = 15 A.
Tj = 25 °C; solid line: typical values; dotted line: maximum values.
Fig.10 Collector-emitter saturation voltage as a
function of base current.
1
10−2
10−1
1
10 IC (A) 102
Tj = 125 °C.
Fig.11 DC current gain; typical values.
handbook, halfpage
VIM
0
tp
T
VCC
RL
RB
D.U.T.
MGE244
VCC = 250 V; tp = 20 µs; VIM = −6 to +8 V; tp/T = 0.01.
The values of RB and RL are selected in accordance with ICon and
IBon requirements.
Fig.12 Test circuit resistive load.
handbook, halfpage
90%
IB
10%
tr ≤30 ns
90%
MBB731
IB on
t
IB off
IC on
IC
10%
ton
tf
t
ts
tr ≤ 20 ns.
Fig.13 Switching time waveforms with
resistive load.
1997 Aug 13
9
Share Link: 