MMBTA42 데이터 시트보기 (PDF) - Infineon Technologies

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MMBTA42

NPN Silicon High-Voltage Transistors

Infineon Technologies 

SMBTA42/MMBTA42

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter

Symbol

Values

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

V(BR)CEO 300

-

-

IC = 1 mA, IB = 0

Collector-base breakdown voltage

V(BR)CBO 300

-

-

IC = 100 µA, IE = 0

Emitter-base breakdown voltage

V(BR)EBO 6

-

-

IE = 100 µA, IC = 0

Collector-base cutoff current

I CBO

VCB = 200 V, IE = 0

-

-

0.1

VCB = 200 V, IE = 0 , TA = 150 °C

-

-

20

Emitter-base cutoff current

I EBO

-

- 100

VEB = 5 V, IC = 0

DC current gain1)

hFE

IC = 1 mA, VCE = 10 V

25

-

-

IC = 10 mA, VCE = 10 V

40

-

-

IC = 30 mA, VCE = 10 V

40

-

-

Collector-emitter saturation voltage1)

VCEsat

-

-

0.5

IC = 20 mA, IB = 2 mA

Base emitter saturation voltage1)

VBEsat

-

-

0.9

IC = 20 mA, IB = 2 mA

Unit

V

µA

nA

-

V

AC Characteristics

Transition frequency

IC = 10 MHz, VCE = 20 V, f = 100 MHz

Collector-base capacitance

VCB = 20 V, f = 1 MHz

fT

50 70

- MHz

Ccb

-

-

3 pF

1Pulse test: t < 300µs; D < 2%

2

2007-04-19

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