MMBTA44(2018) 데이터 시트보기 (PDF) - Diotec Semiconductor Germany

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MMBTA44
(Rev.:2018)

SMD High Voltage NPN Transistors

Diotec Semiconductor Germany  

Characteristics

Collector saturation voltage – Kollektor-Sättigungsspannung 1)

IC = 1 mA

IC = 10 mA

IC = 20 mA

IC = 50 mA

IB = 0.1 mA

IB = 1 mA

IB = 2 mA

IB = 5 mA

Base saturation voltage – Basis-Sättigungsspannung 1)

IC = 20 mA IB = 2 mA

IC = 10 mA IB = 1 mA

DC current gain – Kollektor-Basis-Stromverhältnis

VCE = 10 V

IC = 1 mA

IC = 10 mA

IC = 30 mA

IC = 50 mA

IC = 100 mA

Gain-Bandwidth Product – Transitfrequenz

VCE = 20 V, IC = 10 mA, f = 100 MHz

Collector-Base Capacitance – Kollektor-Basis-Kapazität

VCB = 20 V, IE = ie = 0, f = 1 MHz

Thermal resistance junction – ambient

Wärmewiderstand Sperrschicht – Umgebung

MMBTA42 | MMBTA44

Tj = 25°C MMBTA42

Kennwerte

MMBTA44

VCEsat

–

–

< 500 mV

–

< 400 mV

< 500 mV

–

< 750 mV

VBEsat

< 900 mV

–

–

< 750 mV

> 25

80 ... 200

hFE

> 40

–

–

> 40

50 ... 200

–

> 45

> 40

fT

> 50 MHz

–

CCBO

< 3 pF

< 7 pF

RthA

< 420 K/W 1)

120

[%]

100

80

60

40

20

Ptot

0

0 TA 50

100

150 [°C]

Power dissipation versus ambient temperature 1)

Verlustleistung in Abh. von d. Umgebungstemp.1)

Disclaimer: See data book page 2 or website

Haftungssauschluss: Siehe Datenbuch Seite 2 oder Internet

1 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%

1 Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss

2

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