NX25F011A 데이터 시트보기 (PDF) - NexFlash -> Winbond Electronics

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NX25F011A

1M-BIT AND 4M-BIT SERIAL FLASH MEMORIES WITH 4-PIN SPI INTERFACE

NexFlash -> Winbond Electronics 

NX25F011A

NNXX252F054F1A011A

NX25F041A

1M-BIT AND 4M-BIT SERIAL FLASH MEMORIES

WITH 4-PIN SPI INTERFACE

1 PRELIMINARY

JUNE 1999

FEATURES

• Flash Storage for Resource-Limited Systems

– Ideal for portable/mobile and microcontroller-based

applications that store voice, text, and data

• NexFlash Serial Flash Memory

– Patented single transistor EEPROM technology

– High-density, low-voltage & power, cost-effective

– Small 264-byte sectors

– 10K/100K write cycles, ten years data retention

• Ultra-low Power for Battery-Operation

– Single 5V or 3V supply for read and erase/write

– 1 µA standby current, 5 mA active @ 3V (typical)

– Low frequency read command for very low power

– No pre-erase. Erase/Write time of 5 ms/sector

@ 5V ensures efficient battery use

2

• 4-pin SPI Serial Interface

– Easily interfaces with popular microcontrollers

– Clock operation as fast as 16 MHz

3

• On-chip Serial SRAM

– Dual 264-byte Read/Write SRAM buffers

– Use in conjunction with or independent of Flash

– Off-loads RAM-limited microcontrollers

4

• Special Features for Media-Storage Applications

– Byte-level addressing

5 – Transfer and compare sector to SRAM commands

– Versatile hardware and software write-protection

– Alternate oscillator frequency for EMI sensitive

applications.

– In-system electronic part number identification

– Removable Serial Flash Module package option

6

7

DESCRIPTION

The NX25F011A and NX25F041A Serial Flash memories

provide a storage solution for systems limited in power, pins,

space, hardware, and firmware resources. They are ideal

for applications that store voice, text, and data in a portable

or mobile environment. Using NexFlash's patented single

transistor EEPROM cell, the devices offer a high-density,

low-voltage, low-power, and cost-effective non-volatile

memory solution. The devices operate on a single 5V or 3V

(2.7V-3.6V) supply for Read and Erase/Write with typical

current consumption as low as 5 mA active and less than

1 µA standby. Sector erase/write speeds as fast as 5 ms

increase system performance, minimize power-on time,

and maximize battery life.

8

9 The NX25F011A and NX25F041A provide 1M-bit and

4M-bit of flash memory organized as 512 and 2048 sectors

of 264 bytes each. Each sector is individually addressable

through basic serial-clocked commands. The 4-pin SPI serial

10 interface works directly with popular microcontrollers.

Special features include: on-chip serial SRAM, byte-level

addressing, double-buffered sector writes, transfer/compare

sector to SRAM, hardware and software write protection,

11 alternate oscillator frequency, electronic part number, and

removable Serial Flash Module package option. Develop-

ment is supported with the PC-based Serial Flash

Development Kit.

12

This document contains PRELIMINARY INFORMATION. NexFlash reserves the right to make changes to its product at any time without notice in order to improve design and supply the best

possible product. We assume no responsibility for any errors which may appear in this publication.  Copyright 1998, NexFlash Technologies, Inc.

NexFlash Technologies, Inc.

1

PRELIMINARY NXSF014B-0699

06/11/99

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