NX25F011A 데이터 시트보기 (PDF) - NexFlash -> Winbond Electronics

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NX25F011A

1M-BIT AND 4M-BIT SERIAL FLASH MEMORIES WITH 4-PIN SPI INTERFACE

NexFlash -> Winbond Electronics 

NX25F011A

NX25F041A

Serial Flash Memory Array

The Flash memory array of the NX25F011A and

NX25F041A are organized as 512 and 2048 sectors of

264-bytes (2,112 bits) each, as shown in Figure 4. Group-

ing sectors as pairs offers a convenient format for applica-

tions that store and transfer data in a DOS compatible

sector size of 512-bytes. The additional 16-bytes per

sector pair can be used for sector management such as

header, checksum, CRC, or other related application

requirements.

The Serial Flash memory of the NX25F011A and

NX25F041A is byte-addressable. That is, each sector is

individually addressable and each byte within a sector is

individually addressable. This allows a single byte, or

specified sequence of bytes, to be read without having to

clock an entire 264-byte sector out of the device. Data can

be read directly from a sector in the Flash memory array

by using a Read from Sector command from the SPI bus.

Data can be written to a sector in the Flash memory array

using a Write to Sector command or a Transfer SRAM to

Sector command.

After a sector has been written, the memory array will

become busy while it is programming the specified

non-volatile memory cells of that sector. This busy time will

not exceed tWP (~5 ms for 5V devices), during which time

the Flash array is unavailable for read or write access. The

device can be tested to determine the array’s availability

by reading the Ready/Busy status, by reading the status

register, or by testing the Ready/Busy pin. Note that the

SRAM is always available, even when the memory array

is busy. See the Serial SRAM section for more details.

The NX25F011A and NX25F041A do not require pre-erase.

The device incorporates an auto-erase-before-write

feature that automatically erases the addressed sector at

the beginning of the write operation. This allows for fast

and consistent programming times and simplifies firm-

ware support by eliminating the need for a separate pre-

erase algorithm and the complex management of dispro-

portional erase and write block sizes commonly found in

other devices.

Sector Address:

25F011

S[8:0]

25F041

S[10:0]

Sector 511

1FFH

Sector 2047

7FFH

Sector 510

1FEH

Sector 2046

7FEH

Byte 0

000H

Byte 0

000H

Byte Address: B[8:0]

Byte1

001H

Byte1

001H

Byte 2-261

002H-105H

Byte 2-261

002H-105H

Byte 262 Byte 263

106H

107H

Byte 262 Byte 263

106H

107H

Sector 2-509

002H-1FDH

Sector 2-2045

002H-7FDH

1M-bit or 4M-bit Serial Flash Memory Array

512 and 2048 Byte-Addressable Sectors

of 264-Bytes each

Sector 1

001H

Sector 0

000H

4

Sector 1

001H

Sector 0

000H

Byte 0

000H

Byte 0

000H

Byte 1

001H

Byte 1

001H

Byte 2-261

002H-105H

Byte 2-261

002H-105H

Byte 262 Byte 263

106H

107H

Byte 262 Byte 263

106H

107H

Figure 4. NX25F011A and NX25F041A Serial Flash Memory Array

NexFlash Technologies, Inc.

PRELIMINARY NXSF014B-0699

06/11/99

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