2N5886 데이터 시트보기 (PDF) - SavantIC Semiconductor
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2N5886 Datasheet PDF : 3 Pages
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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2N5885 2N5886
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
2N5885
2N5886
IC=0.2A ;IB=0
VCEsat-1 Collector-emitter saturation voltage IC=15A; IB=1.5A
VCEsat-2 Collector-emitter saturation voltage IC=25A; IB=6.25A
VBEsat Base-emitter saturation voltage
IC=25A; IB=6.25A
VBE
Base-emitter on voltage
IC=10A ; VCE=4V
ICBO
Collector cut-off current
VCB=ratedVCBO; IB=0
ICEO
Collector
cut-off current
2N5885 VCE=30V; IB=0
2N5886 VCE=40V; IB=0
ICEV
Collector cut-off current
(VBE(off)=1.5V)
VCE=ratedVCEO;
VCE=ratedVCEO; TC=150
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=3A ; VCE=4V
hFE-2
DC current gain
IC=10A ; VCE=4V
hFE-3
DC current gain
IC=25A ; VCE=4V
fT
Trainsistion frequency
IC=1A ; VCE=10V;f=1MHz
Switching times
tr
Rise time
ts
Storage time
tf
Fall time
IC=10A ;IB1=- IB2=1A
VCC=30V
MIN
TYP. MAX UNIT
60
V
80
1
V
4
V
2.5
V
1.5
V
1
mA
2
mA
1
mA
10
mA
1
mA
35
20
100
4
4
MHz
0.7
µs
1.0
µs
0.8
µs
2
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