2N6050 데이터 시트보기 (PDF) - New Jersey Semiconductor
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2N6050 Datasheet PDF : 2 Pages
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ELECTRICAL CHARACTERISTICS (T. = 25*C unless otherwise noted )
Characteristic
Symbol
Win
OFF CHARACTERISTICS
Collector - Emitter Sustaining Voltage (1)
VCECMSU*)
( I, = 100 mA, I. - 0 )
2N6050, 2N60S7
60
2N6051, 2N6058
80
2N6052, 2N6059
100
Collector Cutoff Current
( Vc, = 30 V, 1, = 0 )
(Ve, = 40V, l, = 0)
( VCB = 50 V, 1. = 0 )
'CEO
2N6050, ZN6057
2N6051.2N605S
2N6052, 2N6059
Collector Cutoff Current
(VCB = Rated Vei0)ViI(^ = 1.5V)
'CEX
( Vel = Rated VC10, V,^ =. 1 .5 V, Tc = 150°C )
Emitter Cutoff Current
'EBO
(VEB = S.OV,IC = 0)
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 6.0AVCE = 3.0V)
(IC = 12A,VCE = 3.0V)
Collector-Emitter Saturation Voltage
(IC = 6.0A, !B = 24mA)
(IC=12A IB = 120mA)
Base-Emitter On Voltage
(IC = 6.0AVCE = 3.0V)
Base-Emitter Saturation Voltage
(IC = 12A !B=120mA)
hFE
750
100
VCE(»,,
VBE(on)
VBE(»«,
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product (2)
( lc = 5.0 A VCE = 3.0 V, f = 1 .0 MHz )
'T
4.0
Small-Signal Current Gain
{ lc = 5.0 A VCE a 3.0 V, f = 1.0 KHZ )
"•
300
(1) Pulse Test: Pulse width 5 300 us , Duty Cycle £ 2.0%
Max
1.0
1.0
1.0
0.5
5.0
2.0
18000
2.0
3.0
2.8
4.0
Untt
V
mA
mA
mA
V
V
V
MHz
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