M12L64164A-7BG2Y 데이터 시트보기 (PDF) - [Elite Semiconductor Memory Technology Inc.

부품명

상세내역

제조사

M12L64164A-7BG2Y

1M x 16 Bit x 4 Banks Synchronous DRAM

[Elite Semiconductor Memory Technology Inc. 

ESMT

M12L64164A

BURST SEQUENCE (BURST LENGTH = 4)

Initial Address

A1

A0

Sequential

Interleave

0

0

0

1

2

3

0

1

2

3

0

1

1

2

3

0

1

0

3

2

1

0

2

3

0

1

2

3

0

1

1

1

3

0

1

2

3

2

1

0

BURST SEQUENCE (BURST LENGTH = 8)

Initial Address

A2

A1

A0

0

0

0

0

0

1

0

1

0

0

1

1

1

0

0

1

0

1

1

1

0

1

1

1

Sequential

Interleave

0123456701234567

1234567010325476

2345670123016745

3456701232107654

4567012345670123

5670123454761032

6701234567452301

7012345676543210

Elite Semiconductor Memory Technology Inc.

Publication Date: May 2009

Revision: 3.4

9/45

Share Link: