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M12L64164A-6TA 데이터 시트보기 (PDF) - [Elite Semiconductor Memory Technology Inc.
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M12L64164A-6TA
1M x 16 Bit x 4 Banks Synchronous DRAM
[Elite Semiconductor Memory Technology Inc.
M12L64164A-6TA Datasheet PDF : 44 Pages
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ESMT
M12L64164A
Operation temperature condition -25
℃
~ 85
℃
BURST SEQUENCE (BURST LENGTH = 4)
Initial Adrress
A1
A0
Sequential
Interleave
0
0
0
1
2
3
0
1
2
3
0
1
1
2
3
0
1
0
3
2
1
0
2
3
0
1
2
3
0
1
1
1
3
0
1
2
3
2
1
0
BURST SEQUENCE (BURST LENGTH = 8)
Initial
A2
A1
A0
Sequential
Interleave
0
0
0
0123456701234567
0
0
1
1234567010325476
0
1
0
2345670123016745
0
1
1
3456701232107654
1
0
0
4567012345670123
1
0
1
5670123454761032
1
1
0
6701234567452301
1
1
1
7012345676543210
Elite Semiconductor Memory Technology Inc.
Publication Date
:
Dec. 2004
Revision
:
0.1
10/44
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