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RS3A 데이터 시트보기 (PDF) - LiteOn Technology

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RS3A Datasheet PDF : 3 Pages
1 2 3
LITE-ON
SEMICONDUCTOR
SURFACE MOUNT
FAST RECOVERY RECTIFIERS
RS3A thru RS3M
REVERSE VOLTAGE - 50 to 1000 Volts
FORWARD CURRENT - 3.0 Amperes
FEATURES
Fast switching for high efficiency
For surface mounted applications
Glass passivated chip
Low reverse leakage current
Low forward voltage drop
High current capability
B
Plastic material has UL flammability classification 94V-0
MECHANICAL DATA
G
Case : Molded plastic
Polarity : Color band denotes cathode
H
Weight : 0.007 ounces, 0.21 grams
SMC
A
F
E
DIM.
SMC
MIN.
MAX.
A
6.60 7.11
C
B
5.59 6.22
C
2.92 3.18
D
0.15 0.31
E
7.75 8.13
F
0.05 0.20
G
2.01 2.50
D
H
0.76 1.52
All Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25ambient temperature unless otherwise specified.
CHARACTERISTICS
SYMBOL RS3A RS3B RS3D RS3G RS3J RS3K RS3M UNIT
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
VRRM
50
VRMS
35
VDC
50
Maximum Average Forward
Rectified Current
@TL =75 C
I(AV)
Peak Forward Surge Current
8.3ms single half sine-wave
IFSM
super imposed on rated load (JEDEC METHOD)
Maximum forward Voltage at 3.0A DC
VF
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ =25 C
@TJ =125 C
IR
I 2 t Rating for fusing (3ms < t < 8.3ms)
I2 t
100
200
400
600
800
1000
V
70
140
280
420
560
700
V
100
200
400
600
800
1000
V
3.0
A
100
A
1.3
V
5
uA
250
41
A 2S
Maximum Reverse Recovery Time (Note 1)
TRR
150
250
500
ns
Typical JunctionCapacitance (Note 2)
CJ
50
pF
Typical Thermal Resistance (Note 3)
Typical Thermal Resistance (Note 4)
R0JL
R0JA
10
C/W
50
C/W
Operating Temperature Range
Storage Temperature Range
TJ
TSTG
NOTES :1. Reverse Recovery Test Conditions :IF=0.5A,IR=1.0A,IRR=0.25A.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Thermal Resistance Junction to Lead.
4. Thermal Resistance Junction to Ambient.
-55 to +150
-55 to +150
C
C
REV. 5, Oct-2010, KSEC01

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