2SA1295 데이터 시트보기 (PDF) - Quanzhou Jinmei Electronic
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2SA1295 Datasheet PDF : 4 Pages
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JMnic
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ; IB=0
VCEsat Collector-emitter saturation voltage IC=-5A ;IB=-0.5A
ICBO
Collector cut-off current
VCB=-230V; IE=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE
DC current gain
IC=-5A ; VCE=-4V
Cob
Output capacitance
IE=0 ; VCB=-10V;f=1MHz
fT
Transition frequency
IC=-2A ; VCE=-12V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=-5A;RL=12Ω
IB1=-IB2=-0.5A
VCC=-60V
hFE classifications
O
Y
50-100
70-140
Product Specification
2SA1295
MIN TYP. MAX UNIT
-230
V
-2.0
V
-100 μA
-100 μA
50
140
500
pF
35
MHz
0.35
μs
1.50
μs
0.30
μs
2
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