PHPT610030PK 데이터 시트보기 (PDF) - NXP Semiconductors.

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PHPT610030PK

PNP/PNP high power double bipolar transistor

NXP Semiconductors. 

PHPT610030PK

PNP/PNP high power double bipolar transistor

22 October 2014

Product data sheet

1. General description

PNP/PNP high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface-

Mounted Device (SMD) power plastic package.

NPN/NPN complement: PHPT610030NK.

NPN/PNP complement: PHPT610030NPK.

2. Features and benefits

• High thermal power dissipation capability

• Suitable for high temperature applications up to 175 °C

• Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK

• High energy efficiency due to less heat generation

• AEC-Q101 qualified

3. Applications

• Motor control

• Power management

• Load switch

• Linear mode voltage regulator

• Backlighting applications

• Relay replacement

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Per transistor

VCEO

collector-emitter

voltage

IC

collector current

Per transistor

RCEsat

collector-emitter

saturation resistance

Conditions

open base

IC = -2 A; IB = -0.2 A; pulsed;

tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C

Min Typ Max Unit

-

-

-100 V

-

-

-3

A

-

110 180 mΩ

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