SUT161G 데이터 시트보기 (PDF) - Kodenshi Auk Co., LTD
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SUT161G Datasheet PDF : 5 Pages
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Descriptions
• General purpose amplifier
• Recommended for LED Drive Application
SUT161G
Dual NPN Bipolar transistor
Features
• Thermally Enhanced Power PKG
• Low saturation: VCE(sat)= 0.5V Max
• 2 NPN chips in TESOP-8 Package
Ordering Information
Type NO.
Marking
TESOP-8
Package Code
SUT161G
SUT161□
□ : Year & Week Code
Absolute maximum ratings(TR1, TR2)
Characteristic
Symbol
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
VCBO
VCEO
VEBO
IC
ICP*
Collector power dissipation
Junction temperature
Storage temperature
* : Single pulse, tp= 300 ㎲
PC(Ta=25°C) **
PC(Tc=25°C)
TJ
Tstg
TESOP-8
Ratings
160
160
6
1
2
0.75
0.55
7.5
150
-55~150
(Ta=25°C)
Unit
V
V
V
A(DC)
A(Pulse)
W/TOTAL
W/ELEMENT
W/TOTAL
°C
°C
** : Each terminal mounted on a recommended solder land
Electrical Characteristics(TR1, TR2)
Characteristic
Symbol
Test Condition
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
BVCBO
BVCEO
IC=100μA, IE=0
IC=1mA, IB=0
Emitter-Base breakdown voltage
BVEBO IE=100μA, IC=0
Collector cut-off current
ICBO
VCB=160V, IE=0
Emitter cut-off current
DC current gain
Collector-Emitter saturation voltage
Base-Emitter saturation voltage
Transition frequency
Collector output capacitance
IEBO
hFE 1)
VCE(sat)
VBE(sat)
fT
Cob
VEB=4V, IC=0
VCE=5V, IC= 30 ㎃
IC=500mA, IB=50mA
IC=500 ㎃, IB=50 ㎃
VCE=5V, IC= 50 ㎃
VCB=10V, IE=0, f=1 ㎒
Note 1) hFE Rank : 200~400 only
KSD-T7K004-000
Min.
160
160
6
-
-
200
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
150
10
Max.
-
-
-
0.1
0.1
400
0.5
1.2
-
-
Unit
V
V
V
㎂
㎂
-
V
V
㎒
㎊
1
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