2SA1943BL 데이터 시트보기 (PDF) - Nell Semiconductor Co., Ltd
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2SA1943BL Datasheet PDF : 3 Pages
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SEMICONDUCTOR
2SA1943BL Series RRooHHSS
Nell High Power Products
Silicon PNP triple diffusion planar transistor
-15A/-230V/150W
20.00±0.20
18.00
ø3.30±0.20
5.00
3.00
TO-3PL
FEATURES
High breakdown voltage, VCEO = -230V (min)
Complementary to 2SC5200BL
TO-3PL package which can be installed to the
heat sink with one screw
APPLICATIONS
Suitable for use in 100W high fidelity audio
amplifier’s output stage
2.50
(typ.)
3.00
5.45±0.05
1
1.00
(typ.)
5.45±0.05
23
0.60
3.20
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
B
All dimensions in millimeters
C
E PNP
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
SYMBOL
PARAMETER
VCBO
Collector to base voltage
VCEO
Collector to emitter voltage
VEBO
Emitter to base voltage
ICP
Peak collector current tp ≤ 5 ms
IC
Collector current
IB
Base current
PC
Collector power dissipation
Tj
Junction temperature
Tstg
Storage temperature
THERMAL CHARACTERISTICS (TC = 25°C)
SYMBOL
PARAMETER
Rth(j-c)
Maximum thermal resistance, junction to case
www.nellsemi.com
Page 1 of 3
VALUE
-230
-230
-5
-30
-15
-1.5
TC= 25°C
150
150
-55 to 150
UNIT
V
A
W
ºC
VALUE
1.10
UNIT
ºC/W
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