AT-42085 데이터 시트보기 (PDF) - HP => Agilent Technologies

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AT-42085

Up to 6 GHz Medium Power Silicon Bipolar Transistor

HP => Agilent Technologies 

Up to 6 GHz Medium Power

Silicon Bipolar Transistor

Technical Data

AT-42085

Features

• High Output Power:

20.5 dBm Typical P1 dB at 2.0␣ GHz

• High Gain at 1 dB

Compression:

14.0 dB Typical G1dBat 2.0␣ GHz

• Low Noise Figure:

2.0 dB Typical NFOat 2.0␣ GHz

• High Gain-Bandwidth

Product: 8.0 GHz Typical fT

• Low Cost Plastic Package

Description

Hewlett-Packard’s AT-42085 is a

general purpose NPN bipolar

transistor that offers excellent

high frequency performance. The

AT-42085 is housed in a low cost

.085" diameter plastic package.

The 4 micron emitter-to-emitter

pitch enables this transistor to be

used in many different functions.

The 20 emitter finger interdigi-

tated geometry yields a medium

sized transistor with impedances

that are easy to match for low

noise and medium power applica-

tions. Applications include use in

wireless systems as an LNA, gain

stage, buffer, oscillator, and

mixer. An optimum noise match

near 50␣ Ω up to 1 GHz, makes this

device easy to use as a low noise

amplifier.

85 Plastic Package

The AT-42085 bipolar transistor is

fabricated using Hewlett-Packard’s

10 GHz fT Self-Aligned-Transistor

(SAT) process. The die is nitride

passivated for surface protection.

Excellent device uniformity,

performance and reliability are

produced by the use of ion-

implantation, self-alignment

techniques, and gold metalization

in the fabrication of this device.

4-169

5965-8913E

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