AT-42010 데이터 시트보기 (PDF) - Avago Technologies
부품명
상세내역
제조사
AT-42010 Datasheet PDF : 5 Pages
| |||
AT-42010
Up to 6 GHz Medium Power Silicon Bipolar Transistor
Data Sheet
Description
Features
Avago’s AT-42010 is a general purpose NPN bipolar tran-
sistor that offers excellent high frequency performance.
The AT-42010 is housed in a hermetic, high reliability
100 mil ceramic package. The 4 micron emitter-to-emitter
pitch enables this transistor to be used in many different
functions. The 20 emitter finger interdigitated geometry
yields a medium sized transistor with impedances that
are easy to match for low noise and medium power
applications. This device is designed for use in low noise,
wideband amplifier, mixer and oscillator applications in
the VHF, UHF, and microwave frequencies. An optimum
noise match near 50Ω up to 1 GHz, makes this device
easy to use as a low noise amplifier.
• High Output Power:
21.0 dBm Typical P1 dB at 2.0 GHz
20.5 dBm Typical P1 dB at 4.0 GHz
• High Gain at 1 dB Compression:
14.0 dB Typical G1 dB at 2.0 GHz
9.5 dB Typical G1 dB at 4.0 GHz
• Low Noise Figure:
1.9 dB Typical NFO at 2.0 GHz
• High Gain-Bandwidth Product: 8.0 GHz Typical fT
• Hermetic Gold-ceramic Microstrip Package
The AT-42010 bipolar transistor is fabricated using Avago’s
10 GHz fT Self-Aligned-Transistor (SAT) process. The die is
nitride passivated for surface protection. Excellent device
uniformity, performance and reliability are produced by
the use of ion-implantation, self-alignment techniques,
and gold metalization in the fabrication of this device.
100 mil Package
IFD-53010 pkg
Share Link: 