2SC4664 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SC4664 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4664
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0
200
V
VCEsat Collector-emitter saturation voltage IC=4A; IB=0.8A
1.0
V
VBEsat Base-emitter saturation voltage
IC=4A; IB=0.8A
1.5
V
ICBO
Collector cut-off current
ICEO
Collector cut-off current
At rated volatge
0.1
mA
IEBO
Emitter cut-off current
At rated volatge
0.1
mA
hFE-1
DC current gain
IC=4A ; VCE=2V
10
25
hFE-2
fT
ton
ts
tf
DC current gain
固IN电C半H导AN体GE SEMICONDUTOR Transition frequency
Turn-on time
Storage time
Fall time
IC=1mA ; VCE=2V
IC=0.8A ; VCE=10V
IC=4A;IB1=0.8A
IB2=1.6A ,RL=37.5Ω
VBB2=4V
10
13
0.3
1.0
0.1
MHz
μs
μs
μs
2
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