BCY72 데이터 시트보기 (PDF) - New Jersey Semiconductor

부품명

상세내역

제조사

BCY72

GENERAL PURPOSE APPLICATIONS

New Jersey Semiconductor 

IHbHMALDATA

Rth J-C83B Thermal Resistance Junction-case

Rth j-amb Thermal Resistance Junction-ambient

Max

150

°C/W

Max

500

°C/W

ELECTRICAL CHARACTERISTICS (Tamb = 25 °C unless otherwise specified)

Symbol

ICES

Parameter

Collector Cutoff Current

(VBe=0)

IEBO

VCE (sat)*

VBE(sat)*

Emitter cutoff Current

Oo-O)

Collector-emitter Saturation

Voltage

Base-Emitter Saturation Voltage

hFE* DC Current Gain

hfa

Small Signal Current Gain

(for BCY71 only)

fr

Transition Frequency

CEBO Emitter-base Capacitance

CCBO Collector-base Capacitance

* Pulsed : pulse duration n 300 us, duty cycle = 1 %.

Test Conditions

For BCY70

VCE =-20 V

VCE =- 50 V

For BCY71

VCB =- 20 V

VCB = - 45 V

For BCY72

VCB =- 20 V

VCB =- 25 V

VEB =-5 V

Mln. Typ. Max. Unit

- 10 nA

-500 nA

-100 nA

- 10 HA

-100 nA

- 10 HA

-10 HA

lc =- 10 mA IB =- 1 mA

lc =- 50 mA IB= - 5 mA

lc =- 10 mA IB =- 1 mA

For BCY70 and BCY71 Only

lc =-50 mA IB=- 5 mA

For BCY70

lc=-0,1 mA

lc =-1 mA

lc =-10mA

lc = - 50 mA

For BCY71

lc =-0.01 mA

lc=-0.1 mA

l c « - 1 mA

lc =- 10mA

lc =-50mA

For BCY72

l c = - 1 mA

lc =- 10mA

VCE =- 1 V

VCE =-1 V

VCE =-1 V

VCE = - 1 V

VCE = - 1 V

Vce =-1 V

VCE =-1 V

VCE =-1 V

VCE =- 1 V

VCE — 1 V

VCE =- 1V

lc =-1 mA

f = 1 kHz

VCE =-10 V

lc =-0,1 mA VCE =-20 V

f = 10.7 MHz

For BCY71

l c - - 1 0 m A VCE =- 20V

f = 100 MHz

For BCY70

For BCY70 and BCY72

lc=0

f - 1 MHz

VEB =-1 V

IE=0

f » 1 MHz

VCB=-10V

- 0.6

40

45

50

15

80

90

100

15

40

50

100

15

250

200

-0.25 V

-0.5 V

-0.9 V

-1.2 V

60

600

400

MHz

-

MHz

MHz

8 PF

PF

6

Share Link: