MBM29F200BC 데이터 시트보기 (PDF) - Fujitsu

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MBM29F200BC

FLASH MEMORY CMOS 2M (256K × 8/128K × 16) BIT

Fujitsu 

MBM29F200TC-55/-70/-90/MBM29F200BC-55/-70/-90

s PRODUCT LINE UP

Part No.

Ordering Part No.

VCC = 5.0 V ± 5%

VCC = 5.0 V ± 10%

Max. Address Access Time (ns)

Max. CE Access Time (ns)

Max. OE Access Time (ns)

s BLOCK DIAGRAM

MBM29F200TC/MBM29F200BC

-55

—

—

—

-70

-90

55

70

90

55

70

90

30

30

35

VCC

VSS

WE

BYTE

RESET

CE

OE

RY/BY

Buffer

RY/BY

Erase Voltage

Generator

DQ0 to DQ15

Input/Output

Buffers

State

Control

Command

Register

Program Voltage

Generator

Chip Enable

Output Enable

Logic

STB Data Latch

A0 to A16

A-1

STB

Y-Decoder

Low VCC Detector

Timer for

Program/Erase

Address

Latch

X-Decoder

Y-Gating

Cell Matrix

5

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