2SC4793 데이터 시트보기 (PDF) - Quanzhou Jinmei Electronic
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2SC4793 Datasheet PDF : 3 Pages
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Product Specification
Silicon NPN Power Transistors
www.jmnic.com
2SC4793
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
VCEO
Collector-emitter breakdown voltage IC=10mA ; IB=0
230
VCEsat Collector-emitter saturation voltage IC=0.5A IB=50mA
VBE
Base-emitter voltage
IC=0.5A ; VCE=5V
ICBO
Collector cut-off current
VCB=230V IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE
DC current gain
IC=0.1A ; VCE=5V
100
COB
Output capacitance
IE=0; VCB=10V;f=1MHz
fT
Transition frequency
IC=0.1A ; VCE=10V
TYP.
20
100
MAX
1.5
1.0
1.0
1.0
320
UNIT
V
V
V
μA
μA
pF
MHz
JMnic
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