2SC1827 데이터 시트보기 (PDF) - Inchange Semiconductor

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2SC1827

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=25mA ;IB=0

V(BR)CBO Collector-base breakdown voltage

IC=0.1mA ;IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=0.1mA ;IC=0

VCEsat Collector-emitter saturation voltage IC=3A; IB=0.3A

VBEsat Base-emitter saturation voltage

IC=3A ;IB=0.3A

ICBO

Collector cut-off current

VCB=80V;IE=0

IEBO

Emitter cut-off current

VEB=5V; IC=0

hFE

DC current gain

IC=1A ; VCE=4V

fT

Transition frequency

IC=0.5A ; VCE=2V

Product Specification

2SC1827

MIN TYP. MAX UNIT

80

V

80

V

5

V

1.0

V

1.5

V

10

μA

10

μA

60

240

8

MHz

2

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