JMnic
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=25mA ;IB=0
V(BR)CBO Collector-base breakdown voltage
IC=0.1mA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=0.1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=3A; IB=0.3A
VBEsat Base-emitter saturation voltage
IC=3A ;IB=0.3A
ICBO
Collector cut-off current
VCB=80V;IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE
DC current gain
IC=1A ; VCE=4V
fT
Transition frequency
IC=0.5A ; VCE=2V
Product Specification
2SC1827
MIN TYP. MAX UNIT
80
V
80
V
5
V
1.0
V
1.5
V
10
μA
10
μA
60
240
8
MHz
2