MBRB2060CT 데이터 시트보기 (PDF) - Sangdest Microelectronic (Nanjing) Co., Ltd
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MBRB2060CT Datasheet PDF : 6 Pages
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SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0034, Rev. A
MBR2050/2060CT
MBRB2050/2060CT
MBR2050/2060CT-1
Green Products
Electrical Characteristics:
Characteristics
Forward Voltage Drop*
Reverse Current
(per leg)*
Junction Capacitance
(per leg)
Typical Series Inductance
(per leg)
Max. Voltage Rate of Change
* Pulse Width < 300µs, Duty Cycle <2%
Symbol
VF1
VF2
IR1
IR2
CT
LS
dv/dt
Condition
@ 10A, Pulse, TJ = 25 ℃
@ 20 A, Pulse, TJ = 25 °C
@ 10A, Pulse, TJ = 125 ℃
@ 20A, Pulse, TJ = 125 °C
@VR = rated VR
TJ = 25 ℃
@VR = rated VR
TJ = 125 ℃
@VR = 5V, TC = 25 ℃
fSIG = 1MHz
Measured lead to lead 5 mm from
package body
-
Max.
0.80
0.95
0.70
0.85
1.0
150
400
8.0
10,000
Units
V
V
mA
mA
pF
nH
V/ s
Thermal-Mechanical Specifications:
Characteristics
Max. Junction Temperature
Max. Storage Temperature
Maximum Thermal
Resistance Junction to Case
Typical Thermal Resistance
Case to Heat Sink
Approximate Weight
Case Style
Symbol
TJ
Tstg
RθJC
RθCS
wt
Condition
-
-
DC operation
Mounting surface, smooth and
greased
(only for TO-220)
-
ITO-220AB
Specification
-55 to +150
-55 to +150
2.3
0.50
2
Units
°C
°C
°C/W
°C/W
g
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
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