2SB1443 데이터 시트보기 (PDF) - ROHM Semiconductor
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2SB1443 Datasheet PDF : 3 Pages
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Power Transistor (−50V, −2A)
2SB1443
Features
1) Low saturation voltage.
VCE (sat) = −0.35V (Max.) at IC / IB = −1A / 50mA.
2) Excellent DC current gain characteristics.
Dimensions (Unit : mm)
ATV
Absolute maximum ratings (Ta=25C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
−50
−50
−6
−2
−5
1
150
−55 to +150
∗1 Single pulse, Pw=10ms
∗2 Printed circuit board 1.7mm thick, collector plating 1cm2 or larger.
Unit
V
V
V
A (DC)
A (Pulse) ∗1
W ∗2
°C
°C
(1) (2) (3)
(1) Emitter
(2) Collector
(3) Base
Packaging specifications and hFE
Type
Package
hFE
Marking
Code
Basic ordering unit (pieces)
∗Denotes hFE
2SB1443
ATV
Q
−
TV2
2500
Electrical characteristics (Ta=25C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
∗ Measured using pulse current
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min.
Typ.
Max.
Unit
Conditions
−50
−
−
V
IC=−50μA
−50
−
−
V
IC=−1mA
−6
−
−
V
IE=−50μA
−
−
−0.1
μA VCB=−50V
−
−
−0.1
μA VEB=−5V
−
−0.15 −0.35
V
IC/IB=−1A/−50mA
∗
120
−
270
−
VCE/IC=−2V/−0.5A
−
200
−
MHz VCE=−2V, IE=0.5A, f=100MHz
−
36
−
pF VCB=−10V, IE=0A, f=1MHz
∗
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○c 2011 ROHM Co., Ltd. All rights reserved.
1/2
2011.06 - Rev.B
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