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1N4148W 데이터 시트보기 (PDF) - General Semiconductor

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1N4148W
GE
General Semiconductor GE
1N4148W Datasheet PDF : 4 Pages
1 2 3 4
1N4148W, 1N4148WS
ELECTRICAL CHARACTERISTICS
Ratings at 25 ¡C ambient temperature unless otherwise specified
Forward Voltage at IF=10 mA
Leakage Current
at VR = 20 V
at VR = 75 V
at VR = 20 V, Tj = 150 ¡C
Capacitance
at VF = VR = 0 V
Voltage Rise when Switching On
tested with 50 mA Pulses
tp = 0.1ms, Rise Time < 30ns, fp = 5 to 100 kHZ
Reverse Recovery Time
from IF = 10 mA to IR = 1mA,
VR = 6 V, RL = 100 W
Thermal Resistance Junction to Ambient Air
1N4148W
1N4148WS
Rectification Efficiency
at f = 100 MHZ, VRF = 2 V
SYMBOL
VF
MIN.
Ð
TYP.
Ð
IR
Ð
Ð
IR
Ð
Ð
IR
Ð
Ð
Ctot
Ð
Ð
Vfr
Ð
Ð
trr
Ð
Ð
RthJA
Ð
Ð
RthJA
Ð
Ð
hv
0.45
Ð
NOTES::
(2) Valid provided that electrodes are kept at ambient temperature
MAX.
1.0
25
5.0
50
4
2.5
UNIT
Volts
nA
mA
mA
pF
Volts
4
ns
450(2)
650(2)
Ð
¡C/W
¡C/W
Ð
Rectification Efficiency Measurement Circuit

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