12N60A4D 데이터 시트보기 (PDF) - Intersil
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12N60A4D Datasheet PDF : 8 Pages
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HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS
Typical Performance Curves Unless Otherwise Specified (Continued)
3.0
FREQUENCY = 1MHz
2.5
2.0
CIES
1.5
1.0
0.5
0
0
COES
CRES
5
10
15
20
25
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
2.4
DUTY CYCLE < 0.5%, VGE = 15V
PULSE DURATION = 250µs, TJ = 25oC
2.3
2.2
ICE = 18A
2.1
ICE = 12A
2.0
ICE = 6A
1.9
8
9
10 11 12 13 14 15 16
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE
vs GATE TO EMITTER VOLTAGE
14
DUTY CYCLE < 0.5%,
12 PULSE DURATION = 250µs
10
125oC
25oC
8
6
4
2
0
0
0.5
1.0
1.5
2.0
2.5
VEC, FORWARD VOLTAGE (V)
FIGURE 19. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
65
60
55
125oC tb
IEC = 12A, VCE = 390V
50
45
40
35 125oC ta
30
25
20
25oC ta
15
10
25oC tb
5
200 300 400 500 600 700 800 900 1000
diEC/dt, RATE OF CHANGE OF CURRENT (A/µs)
FIGURE 21. RECOVERY TIMES vs RATE OF CHANGE OF
CURRENT
90
dIEC/dt = 200A/µs
80
70 125oC trr
60
50
125oC tb
40
30
125oC ta
20
25oC trr
25oC ta
10
25oC tb
0
1 2 3 4 5 6 7 8 9 10 11 12
IEC, FORWARD CURRENT (A)
FIGURE 20. RECOVERY TIMES vs FORWARD CURRENT
400
VCE = 390V
350
125oC IEC = 12A
300
250
125oC IEC = 6A
200
150
25oC IEC = 12A
100
50
25oC IEC = 6A
0
200 300 400 500 600 700 800 900 1000
diEC/dt, RATE OF CHANGE OF CURRENT (A/µs)
FIGURE 22. STORED CHARGE vs RATE OF CHANGE OF
CURRENT
2-6
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