2SD2689 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SD2689 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD2689
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 7.2A; IB= 1.44A
VBE(sat) Base-Emitter Saturation Voltage
IC= 7.2A; IB= 1.44A
ICBO
Collector Cutoff Current
VCB= 800V ; IE= 0
ICES
Collector Cutoff Current
VCE=1500V ; RBE= 0
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
hFE-1
DC Current Gain
IC= 1A ; VCE= 5V
hFE-2
DC Current Gain
IC= 8A ; VCE= 5V
Switching times
tf
Fall Time
IC= 5A ,RL= 12.5Ω,
IB1=1A, IB2= 2A,
MIN TYP. MAX UNIT
700
V
3
V
1.5
V
10 μA
1.0 mA
1
mA
15
5
8
0.3 μs
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