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BAV170 데이터 시트보기 (PDF) - Nanjing International Group Co

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BAV170
DGNJDZ
Nanjing International Group Co DGNJDZ
BAV170 Datasheet PDF : 1 Pages
1
DONGGUAN NANJING ELECTRONICS LTD.,
SOT-23 Plastic-Encapsulate Diodes
BAV170
Switching Diode
FEATURES
Low Leakage Current
High Switching Speed
APPLICATION
Low-leakage Current Applications
in Surface Mounted Circuits
MARKING:JX
SOT-23
MAXIMUM RATINGS ( Ta=25unless otherwise noted )
Symbol
Parameter
VRRM
VR
Repetitive Peak Reverse Voltage
DC Blocking Voltage
Forward Current(single diode )
IF
Forward Current(double diode )
IFRM Repetitive Peak Forward Current
IFSM Non-repetitive Peak Forward Current@ tp=1μA
PD Power Dissipation
RΘJA Thermal Resistance from Junction to Ambient
Tj
Junction Temperature
Tstg Storage Temperature
Value
85
75
215
125
500
4
250
500
150
-55~+150
Unit
V
V
mA
mA
A
mW
/W
ELECTRICAL CHARACTERISTICS(Ta=25unless otherwise specified)
Parameter
Symbol
Test conditions
Min Typ Max
Unit
Reverse voltage
Reverse current
V(BR)
IR
IR=100μA
VR=75V
75
V
5
nA
IF=1mA
0.9
Forward voltage
IF=10mA
VF
IF=50mA
1
V
1.1
IF=150mA
1.25
Total capacitance
Reverse recovery time
Ctot
VR=0,f=1MHz
trr
IF= IR=10mA, Irr=0.1×IR, RL=100Ω
2
pF
3
μs

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