B1040W 데이터 시트보기 (PDF) - Jiangsu High diode Semiconductor Co., Ltd

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B1040W

SOD1 23 Plastic-Encapsulate Diodes Schottky Rectifier

Jiangsu High diode Semiconductor Co., Ltd 

Features

● VR 40V

● IFAV 1A

B1040W

SOD1 23 Plastic-Encapsulate Diodes

Schottky Rectifier

SOD1 23

Applications

● Low Voltage Rectification

● Low Power Consumption Applications

● High Efficiency DC/DC Conversion

Marking

● SZ

HD SD0.48

Parameter

DC reverse voltage

Mean rectifying current

Non-repetitive Peak Forward Surge Current @ t=8.3ms

Power Dissipation

Thermal Resistance from Junction to Ambient

Junction Temperature

Storage Temperature

Symbol

VR

IO

IFSM

PD

RθJA

TJ

TSTG

Value

40

1

9

0.35

285

125

-55 ~ +150

Unit

V

A

A

W

℃/W

℃

℃

Electrical Characteristics (Ta=25℃ Unless otherwise specified）

Parameter

Symbol

Test Condition

Min Type Max Unit

Reverse voltage

VBR

IR =250uA

40

V

Reverse current

VR =20V

IR

VR =40V

2

20

µA

5

50

µA

Forward voltage

IF =0.5A

VF

IF =0.7A

0.45 0.5

V

0.48 0.53

V

Diode capacitance

IF =1A

CD

VR=10V, f=1MHz

0.5 0.58

V

18

pF

High Diode Semiconductor

1

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