EL2001CN 데이터 시트보기 (PDF) - Elantec -> Intersil

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EL2001CN

Low Power, 70 MHz Buffer Amplifier

Elantec -> Intersil 

EL2001C

Low Power 70 MHz Buffer Amplifier

Electrical Characteristics VS e g15V RS e 50X unless otherwise specified Contd

Parameter

Description

Test Conditions

Vin

Load

Temp

Limits

Min Typ Max

EL2001AC

EL2001C

Test

Level

Units

AV1

Voltage Gain

g12V

%

25 C

0 990 0 998

TMIN TMAX 0 985

I

VV

III

VV

AV2

Voltage Gain

g10V 100X

25 C

0 83 0 93

TMIN TMAX 0 80

I

VV

III

VV

AV3

Voltage Gain

g3V

100X

25 C

0 82 0 89

with VS e g5V

TMIN TMAX 0 79

I

VV

III

VV

VO

Output Voltage

g12V 100X

25 C

g10 g11

Swing

TMIN TMAX g9 5

I

V

III

V

ROUT

Output Resistance

g2V

100X

25 C

TMIN TMAX

10

15

I

X

18

III

X

IOUT

Output Current

g12V

(Note 4)

25 C

TMIN TMAX

g100

g95

g160

I

mA

III

mA

IS

Supply Current

0

%

25 C

TMIN TMAX

13

20

I

mA

25

III

mA

PSRR

Supply Rejection

0

(Note 5)

25 C

60

75

%

TMIN TMAX

50

I

dB

III

dB

tr

Rise Time

0 5V

100X

25 C

42

V

ns

td

Propagation Delay 0 5V

100X

25 C

20

V

ns

SR

Slew Rate (Note 6) g10V 100X

25 C

1200 2000

IV

V ms

Note 1 If the input exceeds the ratings shown (or the supplies) or if the input to output voltage exceeds g7 5V then the input

current must be limited to g50 mA See the applications section for more information

Note 2 The maximum power dissipation depends on package type ambient temperature and heat sinking See the characteristic

curves for more details

Note 3 A heat sink is required to keep the junction temperature below the absolute maximum when the output is short circuited

Note 4 Force the input to a12V and the output to a10V and measure the output current Repeat with b12 VIN and b10V on the

output

Note 5 VOS is measured at VSa e a4 5V VSb e b4 5V and at VSa e a18V VSb e b18V Both supplies are changed

simultaneously

Note 6 Slew rate is measured between VOUT e a5V and b5V

3

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