VP0808L 데이터 시트보기 (PDF) - New Jersey Semiconductor
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VP0808L Datasheet PDF : 2 Pages
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VP0808B/L/M, VP1008B/L/M
Specifications2
Limits
VP0808B/L/M VP1008B/L/M
Static
Parameter
Symbol
Test Conditions
Typb Min Max Min Max Unit
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
V(BR)DSS
VOS(lh)
less
Zero Gate Voltage Drain Current
loss
On-State Drain Current0
Drain-Source On-Resistancec
Forward Transcoiiductancec
Common Source
Output Conductancec
'D(on)
rDS(on)
Efc
gos
Vos = 0 V,lD = -10|tA
VDS = VGS. ID = -' mA
-110 -80
-100
V
-3.4 -2 ^.5 -2 -A.5
VDS = 0 V, VGS = ± 20 V
Tj = 125°C
±100
±500
±100
nA
±500
VDS = --80V,VGS = O V
-10
Tj= 125°C
VDS = -100V, VGS = 0 V
500
HA
-10
Tj=125°C
-500
VDS = -15 V,VQS = -10 V
-2 -1.1
-1.1
A
VGS = -'0 v, ID = -i A
2.5
5
Tj= 125°C 4.4
8
5
Q
8
VDS = -10 V, 1D = -0.5 A
325 200
200
mS
VDS = -7-5 v, ID = -o. 1A
0.45
Dynamic
Input Capacitance
ciss
75
150
150
Output Capacitance
CGSS
VDS —25 v, VGS - 0 V
f = 1 MHz
40
60
60 pF
Reverse Transfer Capacitance
crss
18
25
25
Switching*1
Turn-On Time
Turn-Off Time
td(on)
11
15
tr
VDD = -25 V, RL = 47 Q
30
40
In ~ -0 5 A VrFN - 10 V
td(off)
RG = 25 Q
20
30
tf
20
30
15
40
ns
30
30
Notes
a. TA ^ 25° C unless otherwise noted.
b. For DESIGN AID ONLY, not subject to production testing.
c. Pulse test: PW < 300 us duty cycle < 2%.
d. Switching time is essentially independent of operating temperature.
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