MPSH10 데이터 시트보기 (PDF) - Continental Device India Limited
부품명
상세내역
제조사
MPSH10 Datasheet PDF : 4 Pages
| |||
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTOR
MPSH10
TO-92
Plastic Package
BEC
VHF/UHF Transistor
ABSOLUTE MAXIMUM RATINGS(Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
Collector Emitter Voltage
VCEO
Collector Base Voltage
VCBO
Emitter Base Voltage
VEBO
Power Dissipation @ Ta=25ºC
Derate Above 25ºC
Power Dissipation @ Tc=25ºC
Derate Above 25ºC
Operating And Storage Junction
Temperature Range
PD
PD
Tj, Tstg
VALUE
25
30
3.0
350
2.8
1.0
8.0
- 55 to +150
THERMAL RESISTANCE
Junction to Ambient in free air
Rth (j-a)
357
Junction to case
Rth (j-c)
125
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
MIN
Collector Emitter Voltage
VCEO
IC=1mA, IB=0
25
Collector Base Voltage
VCBO
IC=100µA, IE=0
30
Emitter Base Voltage
VEBO
IE=10µA, IC=0
3.0
Collector Cut Off Current
ICBO
VCB=25V, IE = 0
Emitter Cut Off Current
IEBO
VEB=2V, IC = 0
DC Current Gain
hFE
IC=4mA,VCE=10V
60
Collector Emitter Saturation Voltage
VCE(sat)
IC=4mA, IB=0.4mA
Base Emitter On Voltage
VBE(on)
IC=4mA,VCE=10V
DYNAMIC CHARACTERISTICS
DESCRIPTION
Transition Frequency
Collector Base Capacitance
Common Base feedback Capacitance
Collector Base Time Constant
SYMBOL
fT
Ccb
Crb
rb' CC
TEST CONDITION
IC=4mA, VCE=10V, f=100MHz
VCB=10V, IE=0, f=1MHz
VCB=10V, IE=0, f=1MHz
IC=4mA,VCB=10V, f=31.8MHz
MIN
650
0.35
UNITS
V
V
V
mW
mW/ºC
W
mW/ºC
ºC
ºC/W
ºC/W
MAX
100
100
UNITS
V
V
V
nA
nA
0.50
V
0.95
V
MAX
0.70
0.65
9.00
UNITS
MHz
pF
pF
ps
Continental Device India Limited
Data Sheet
Page 1 of 4
Share Link: 