MPSH10-X-T92-K 데이터 시트보기 (PDF) - Unisonic Technologies
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MPSH10-X-T92-K Datasheet PDF : 4 Pages
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MPSH10
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (Ta=25°C,unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
30
V
Collector-Emitter Voltage
VCEO
25
V
Emitter-Base Voltage
VEBO
3
V
Total Power Dissipation
Pc
350
mW
Collector Current
Ic
50
mA
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°C,unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector-Base Breakdown Voltage BVCBO Ic=100μA
30
Collector-Emitter Breakdown Voltage BVCEO Ic=1mA
25
Emitter-Base Breakdown Voltage
BVEBO IE=10μA
Collector Cut-Off Current
ICBO VCB=25V
Emitter Cut-Off Current
IEBO VEB=2V
Collector-Emitter Saturation Voltage VCE(SAT) IC=4mA, IB=400μA
Base-Emitter On Voltage
VBE(ON) VCE=10V, IC=4mA
DC Current Gain
hFE VCE=10V, IC=4mA
60
Output Capacitace
COB VCB=10V, f=1MHZ
Current Gain Bandwidth Product
fT VCE=10V, IC=4mA, f=100MHZ 650
TYP
MAX
3
100
100
500
950
UNIT
V
V
V
nA
nA
mV
mV
0.7
pF
MHZ
CLASSIFICATION OF hFE
RANK
RANGE
A
60-100
B
90-130
C
120 -200
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R201-022,Ea
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