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EG1Y 데이터 시트보기 (PDF) - Galaxy Semi-Conductor

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EG1Y
BILIN
Galaxy Semi-Conductor BILIN
EG1Y Datasheet PDF : 2 Pages
1 2
BL GALAXY ELECTRICAL
HIGH EFFICIENCY RECTIFIER
EG1Y(Z)--- EG1A(Z)
VOLTAGE RANGE: 70--- 600 V
CURRENT: 1.1---0.6 A
FEATURES
Low cost
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with freon, alcohol, lsopropand and
similar solvents
MECHANICAL DATA
Case: JEDEC DO-41, molded plastic
Terminals: Axial leads,solderable per MIL-STD-202,
Method 208
Polarity: Color band denotes cathode
Weight: 0.012 ounces, 0.34 grams
Mounting: Any
DO - 41
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
EG1Y
Maximumpeak repetitive reverse voltage
VRRM
Maximum RMS voltage
VRMS
MaximumDCblocking voltage
VDC
Maximumaverage forward rectified current
9.5mm lead length, @TA=75
Peak forward surge current
IF(AV)
10ms single half-sine-w ave
IFSM
superimplsed on rated load
@TJ=125
Maximuminstantaneous forward voltage
@ IF=IF(AV)
VF
Maximum reverse current
@TA=25
IR
at rated DC blocking voltage
@TA=100
Maximumreverse recovery time
(Note1)
trr
Typical junction capacitance
(Note2)
CJ
Typical thermal resistance
Operating junction temperature range
(Note3)
RθJL
TJ
Storage temperature range
TSTG
NOTE: 1.Measured with IF=0.5A, IR=1A, Irr=0.25A.
2. Measured at 1.0MHZ and applied rev erse voltage of 4.0V DC.
3.Thermal resistance junction to ambient.
70
49
70
1.1
30.0
1.2
100.0
500.0
EG1Z
EG1
200
400
140
280
200
400
0.8
15.0
1.7
1.8
50.0
300.0
50
20
60
- 55 ----- + 150
- 55 ----- + 150
EG1A UNITS
600
V
420
V
600
V
0.6
A
10.0
A
2.0
V
100.0
A
500.0
ns
15
pF
/W
www.galaxycn.com
Document Number 0262027
BLGALAXY ELECTRICAL
1.

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