2SC5080 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics

부품명

상세내역

제조사

2SC5080

Silicon NPN Epitaxial

Hitachi -> Renesas Electronics 

2SC5080

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

Ratings

Unit

15

V

8

V

1.5

V

50

mA

150

mW

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Collector to base breakdown

voltage

Collector cutoff current

Emitter cutoff current

DC current transfer ratio

Collector output capacitance

Gain bandwidth product

Power gain

Symbol Min

V(BR)CBO

15

I CBO

I CEO

I EBO

hFE

Cob

fT

PG

—

—

—

50

—

10.5

15

Noise figure

NF

—

Note: Marking is “ZD–”.

Typ

—

—

—

—

90

0.4

13.5

18

1.1

Max

—

1

1

10

160

0.75

—

—

2.0

Unit

V

µA

mA

µA

pF

GHz

dB

dB

Test conditions

IC = 10 µA, IE = 0

VCB = 12 V, IE = 0

VCE = 8 V, RBE = ∞

VEB = 1.5 V, IC = 0

VCE = 5 V, IC = 20 mA

VCB = 5 V, IE = 0, f = 1 MHz

VCE = 5 V, IC = 20 mA

VCE = 5 V, IC = 20 mA,

f = 900 MHz

VCE = 5 V, IC = 5 mA,

f = 900 MHz

Attention: This device is very sensitive to electro static discharge.

It is recommended to adopt appropriate cautions when handling this transistor.

2

Share Link: