P4KE100A-E3 데이터 시트보기 (PDF) - New Jersey Semiconductor
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P4KE100A-E3 Datasheet PDF : 3 Pages
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^zmi-Con
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, One.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
TRANSZORB® Transient Voltage Suppressors
P4KE6.8A thru P4KE540A
DO-204AL (DO-41)
PRIMARY CHARACTERISTICS
VWM
VBR uni-directional
5.8 V to 459 V
6.8 V to 540 V
VBR bi-directional
6.8 V to 440 V
PPPM
400 W
PD
1.5W
IFSM (uni-directional only)
40 A
Tj max.
175°C
Polarity
Uni-directional, bi-directional
Package
DO-204AL (DO-41)
FEATURES
• Glass passivated chip junction
• Available in uni-directional and bi-directional
• 400 W peak pulse power capability with a
10/1000 us waveform, repetitive rate (duty
cycle): 0.01 %
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional types, use CA suffix (e.g. P4KE440CA).
Electrical characteristics apply in both directions.
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Peak pulse power dissipation with a 10/1000 us waveform(1) (fig.1)
PPPM
400
Peak pulse current with a 10/1000 us waveform (1>
IPPM
See next table
Power dissipation on infinite heatsink at TL = 75 °C (fig. 5)
PD
1.5
Peak forward surge current 8.3 ms single half-sine wave uni-directional only <2*
'FSM
40
Maximum instantaneous forward voltage at 25 A for uni-directional only <3)
VF
3.5/5.0
Operating junction and storage temperature range
TJ. TSTG
-5510 + 175
Notes
(1> Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2
P) 8.3 ms single half-sine wave or equivalent square wave, duty cycle = 4 pulses per minute maximum
<3> VF = 3.5 V for P4KE220Aand below; VF = 5.0 V for P4KE250A and above
Quality Semi-Conductors
UNIT
W
A
W
A
V
°C
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