BD825 데이터 시트보기 (PDF) - Inchange Semiconductor
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BD825 Datasheet PDF : 2 Pages
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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
BD825
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA; IB= 50mA
VBE(on) Base-Emitter On Voltage
IC= 0.5A ; VCE= 2V
ICBO
Collector Cutoff Current
VCB= 30V; IE= 0
VCB= 30V; IE= 0; TC= 125℃
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 5mA ; VCE= 2V
hFE-2
DC Current Gain
IC= 150mA ; VCE= 2V
hFE-3
DC Current Gain
IC= 500mA ; VCE= 2V
fT
Current-Gain—Bandwidth Product
IC= 50mA ; VCE= 5V
MIN TYP. MAX UNIT
45
V
0.5
V
1.0
V
0.1
uA
10
10
uA
25
40
250
25
250
MHz
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